SOT23 NPN SILICON PLANAR

AVALANCHE TRANSISTOR

PROVISIONAL DATASHEET ISSUE 2 – MARCH 1996

FEATURES

* Avalanche mode operation

* 50A Peak avalanche current

* Low inductance packaging

APPLICATIONS

* Laser LED drivers

* Fast edge generation

* High speed pulse generators

PARTMARKING DETAIL - 413

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

150

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

6V

Continuous Collector Current

100

mA

Peak Collector Current (25ns Pulse Width)

50

A

Power Dissipation

330

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Emitter

Breakdown Voltage

150

V

Collector-Emitter

Breakdown Voltage

50

V

Emitter-Base

Breakdown Voltage

6V

0.1

µ

A

Emitter Cut-Off Current

0.1

µ

A

Collector-Emitter

Saturation Voltage

0.15

V

Base-Emitter

Saturation Voltage

0.8

V

Current in Second

Breakdown (Pulsed)

22

31

A

A

Static Forward Current

Transfer Ratio

50

circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop

The FMMT413 device is a development product. Samples availability and release to production

scheduled for June 1996

FMMT413

FMMT413

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Emitter Inductance

2.5

nH

Standard SOT23 leads

Transition Frequency

150

MHz

f=20MHz

Collector-Base

Capacitance

2pF

f=1MHz

.

20

10

0

40

50

30

Supply Voltage (V)

050

100

150

200

250

p.r.f.=10KHz

TYPICAL CHARACTERISTICS

C

B

E

SOT23

3 - 102

3 - 103