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FMMT413 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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FMMT413 Datasheet(HTML) 1 Page - Zetex Semiconductors |
1 / 2 page SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL - 413 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6V Continuous Collector Current IC 100 mA Peak Collector Current (25ns Pulse Width) ICM 50 A Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CES 150 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) 50 V IC=10mA Emitter-Base Breakdown Voltage V(BR)EBO 6V IE=100µA Collector Cut-Off Current ICBO 0.1 µ A VCB=120V Emitter Cut-Off Current IEBO 0.1 µ A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.15 V IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) 0.8 V IC=10mA, IB=1mA Current in Second Breakdown (Pulsed) IUSB 22 31 A A VC=110V, CCE=4.7nF* VC=130V, CCE=4.7nF* Static Forward Current Transfer Ratio hFE 50 IC=10mA, VCE=10V *Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB)monitor circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop The FMMT413 device is a development product. Samples availability and release to production scheduled for June 1996 FMMT413 FMMT413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Emitter Inductance Le 2.5 nH Standard SOT23 leads Transition Frequency fT 150 MHz IC=10mA, VCE=5V f=20MHz Collector-Base Capacitance Ccb 2pF VCB=10V, IE=0 f=1MHz . 20 10 0 40 50 30 V5 - Supply Voltage (V) CCE=2x4.7nF 050 100 150 200 250 CCE=4.7nF CCE=2.2nF CCE=1.0nF Tamb=25°C IB=5mA/ns p.r.f.=10KHz TYPICAL CHARACTERISTICS C B E SOT23 3 - 102 3 - 103 |
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