SOT23 NPN SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTOR

ISSUE 3 – APRIL 1996

FEATURES

* Fast switching

PARTMARKING DETAILS – 614

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

10

V

Peak Pulse Current

2A

Continuous Collector Current

500

mA

500

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

120

300

V

Collector-Emitter

Sustaining Voltage

100

130

V

Emitter-Base

Breakdown Voltage

10

14

V

0.02

10

nA

10

µ

A

Emitter Cut-Off Current

100

nA

Collector-Emitter

Saturation Voltage

0.9

0.78

1.0

0.9

V

V

Base-Emitter Saturation

Voltage

1.7

1.9

V

Base-Emitter

Turn-On Voltage

1.5

1.8

V

Static Forward Current

Transfer Ratio

15K

5K

Output Capacitance

6pF

Switching Times

0.7

µ

2.5

µ

s

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.

FMMT614

C

B

E

3 - 147

FMMT614

1m

100m

10

1m

100m

10

1m

100m

10

10m

1

100

10

100m

1m

1m

100m

10

0

1

2

+25°C

-55°C

75k

+100°C

0

+25°C

+100°C

2

1

-55°C

0

+100°C

+150°C

2

1

+25°C

0

+100°C

+150°C

2.4

1.2

+25°C

0

1s

100ms

10

0.1

DC

0.001

Safe Operating Area

10ms

1ms

+150°C

+25°C

-55°C

-55°C

100m

10

0.01

1

10m

1

10m

1

10m

1

10m

1

10m

1

25k

50k

TYPICAL CHARACTERISTICS

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