74AUP1G11GW datasheet(9/16 Pages) NXP

Part #	74AUP1G11GW

Description	Low-power 3-input AND gate

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74AUP1G11_1

Product data sheet

Rev. 01 — 4 September 2007

9 of 16

NXP Semiconductors

74AUP1G11

Low-power 3-input AND gate

[1]

All typical values are measured at nominal VCC.

[2]

tpd is the same as tPLH and tPHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

2

× f

o) = sum of the outputs.

12. Waveforms

CL = 5 pF, 10 pF, 15 pF and 30 pF

CPD

power dissipation

capacitance

fi = 1 MHz;

VI = GND to VCC

[3]

VCC = 0.8 V

-

2.7

-

pF

VCC = 1.1 V to 1.3 V

-

2.8

-

pF

VCC = 1.4 V to 1.6 V

-

2.9

-

pF

VCC = 1.65 V to 1.95 V

-

3.1

-

pF

VCC = 2.3 V to 2.7 V

-

3.5

-

pF

VCC = 3.0 V to 3.6 V

-

4.1

-

pF

Table 8.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.

Symbol

Parameter

Conditions

25

°C

−40 °C to +125 °C

Unit

Min

Typ[1]

Max

Min

Max

(85

°C)

Max

(125

°C)

Measurement points are given in Table 9.

Logic levels: VOL and VOH are typical output voltage drop that occur with the output load.

Fig 7.

Input A, B and C to output Y propagation delay times

001aad936

A, B, C input

Y output

tPLH

tPHL

GND

VI

VM

VOH

VOL

Table 9.

Measurement points

Supply voltage

Output

Input

VCC

VM

VI

tr = tf

0.8 V to 3.6 V

0.5

× V

CC

0.5

× V

CC

VCC

≤ 3.0 ns

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