FZT589 datasheet(1/1 Pages) ZETEX

Part #	FZT589

Description	PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

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SOT223 PNP SILICON PLANAR MEDIUM POWER

HIGH PERFORMANCE TRANSISTOR

ISSUE 2 - OCTOBER 1995

PARTMARKING DETAILS -

FZT589

COMPLEMENTARY TYPES - FZT489

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Base Current

IB

-200

mA

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated)

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-50

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-30

V

IC=-1mΑ∗

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

V

IE=-100µA

Collector Cut-Off Current

ICBO

-100

nA

VCB=-30V

Collector Emitter Cut-Off Current

ICES

-100

nA

VCES=-30V

Emitter Cut-Off Current

IEBO

-100

nA

VEB=-4V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.35

-0.65

VIC=-1A, IB=-100mA*

IC=-2A, IB=-200mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1.2

V

IC=-1A, IB=-100mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-1.1

V

IC=-1A, VCE=-2V*

Static Forward

Current Transfer Ratio

hFE

100

80

40

300

IC=-1mA, VCE=-2V*

IC=-500mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

Transition Frequency

fT

100

MHz

IC=-100mA, VCE=-5V

f=100MHz

Output Capacitance

Cobo

15

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT549 datasheet

FZT589

C

E

B

3 - 194

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