SOT223 NPN SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* High Gain + Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Relay drivers, DC-DC converters

PARTMARKING DETAIL -

FZT692B

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

70

V

Collector-Emitter Voltage

70

V

Emitter-Base Voltage

5V

Peak Pulse Current

5A

Continuous Collector Current

2A

2W

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.

BreakdownVoltages

V

V

Cut-Off Currents

0.1

µ

A

0.1

µ

A

Saturation Voltages

0.15

0.5

0.5

V

V

V

0.9

V

Base-Emitter

Turn-On Voltage

0.9

V

Static Forward Current

Transfer Ratio

500

400

150

Transition Frequency

150

Input Capacitance

200

pF

Output Capacitance

12

pF

Switching Times

46

1440

ns

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT692B

FZT692B

C

C

E

B

3 - 224

3 - 223

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

0.01

0.1

1

10

0.4

0.2

0

0.8

0.6

0.01

0.1

1

10

0.4

0.2

0

0.8

0.6

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

Collector Current (Amps)

Collector Current (Amps)

Collector Current (Amps)

Collector Current (Amps)

Collector Current (Amps)

1.5K

1K

500

-55°C

+25°C

+100°C

+175°C

0

0

-55°C

+25°C

+100°C

+175°C

1

0.1

Safe Operating Area

10

100

1s

DC

100ms

10ms

1ms

1

0.01

0.1

10