FZT790A datasheet(2/2 Pages) ZETEX

Part #	FZT790A

Description	PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

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SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A

* Gain of 200 at IC=1 Amp and very low saturation voltage

APPLICATIONS

* DC-DC converters, Siren drivers.

COMPLEMENTARY TYPE -

FZT690B

PARTMARKING DETAIL -

FZT790A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-40

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-6

A

Continuous Collector Current

IC

-3

A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Breakdown Voltages

V(BR)CBO

-50

-70

V

IC=-100µA

V(BR)CEO

-40

-60

V

IC=-10mA*

V(BR)EBO

-5

-8.5

V

IE=-100µA

Collector Cut-Off Current

ICBO

-0.1

-10

µ

A

µ

A

VCB=-30V

VCB=-30V,Tamb=100°C

Emitter Cut-Off Current

IEBO

-0.1

µ

A

VEB=-4V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.15

-0.30

-0.40

-0.25

-0.45

-0.75

V

IC=-500mA, IB=-5mA*

IC=-1A, IB=-10mA*

IC=-2A, IB=-50mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-0.8

-1.0

V

IC=-1A, IB=-10mA*

Base-EmitterTurn-OnVoltage VBE(on)

-0.75

V

IC=-1A, VCE=-2V*

Static Forward Current

Transfer Ratio

hFE

300

250

200

150

800

IC=-10mA, VCE=-2V

IC=-500mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

Transition Frequency

fT

100

MHz

IC=-50mA, VCE=-5V

f=50MHz

Output Capacitance

Cobo

24

pF

VCB=-10V,f=1MHz

Switching Times

ton

toff

35

600

ns

IC=-500mA,

IB1=-50mA,

IB2=-50mA, VCC=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT790A

0.01

0.1

1

10

0.8

0.6

0

1.6

0.01

0.1

1

10

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I+ -

Collector Current (Amps)

VCE(sat) v IC

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

hFE v IC

VBE(sat) v IC

I+ -

Collector Current (Amps)

VBE(on) v IC

750

500

250

Tamb=25°C

-55°C

+25°C

+100°C

+175°C

0

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

-55°C

+25°C

+100°C

+175°C

1.8

1.4

1.2

1.0

0.4

0.2

0.8

0.6

0

1.6

1.8

1.4

1.2

1.0

0.4

0.2

IC/IB=10

IC/IB=100

IC/IB=40

IC/IB=100

VCE=2V

IC/IB=100

VCE=2V

-55°C

+25°C

+100°C

+25°C

-55°C

1

0.1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

10

100

1s

DC

100ms

10ms

100µs

1ms

1

0.01

0.1

10

FZT790A

3 - 249

3 - 248

C

E

B

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