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74HCT2G66DP Datasheet(PDF) 3 Page - NXP Semiconductors |
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74HCT2G66DP Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 21 page 74HC_HCT2G66_6 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 06 — 2 April 2010 3 of 21 NXP Semiconductors 74HC2G66; 74HCT2G66 Dual single-pole single-throw analog switch 6.2 Pin description 7. Functional description [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For TSSOP8 packages above 55 °C the value of P tot derates linearly with 2.5 mW/K. For VSSOP8 packages above 110 °C the value of P tot derates linearly with 8.0 mW/K. For XSON8U package: above 118 °C the value of P tot derates linearly with 7.8 mW/K. Table 3. Pin description Symbol Pin Description 1Y, 2Y 1, 5 independent input or output 1Z, 2Z 2, 6 independent input or output GND 4 ground (0 V) 1E, 2E 7, 3 enable input (active HIGH) VCC 8 supply voltage Table 4. Function table[1] Input nE Switch LOFF HON Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +11.0 V IIK input clamping current VI < −0.5 V or VI >VCC + 0.5 V [1] - ±20 mA ISK switch clamping current VI < −0.5 V or VI >VCC + 0.5 V [1] - ±20 mA ISW switch current VSW > −0.5 V or VSW < VCC + 0.5 V - ±20 mA ICC supply current - 30 mA IGND ground current −30 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation Tamb = −40 °C to +125 °C per package [2] - 300 mW per switch [2] - 100 mW |
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