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74HCT2G86DP Datasheet(PDF) 6 Page - NXP Semiconductors |
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74HCT2G86DP Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page 74HC_HCT2G86_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 7 May 2009 6 of 14 NXP Semiconductors 74HC2G86; 74HCT2G86 Dual 2-input exclusive-OR gate 11. Dynamic characteristics [1] tpd is the same as tPLH and tPHL. [2] tt is the same as tTLH and tTHL. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of the outputs. Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max 74HC2G86 tpd propagation delay nA, nB to nY; see Figure 6 [1] VCC = 2.0 V - 34 120 - 150 - 180 ns VCC = 4.5 V - 11 20 - 25 - 36 ns VCC = 6.0 V - 9.0 17 - 21 - 30 ns tt transition time nY; see Figure 6 [2] VCC = 2.0 V - 18 75 - 95 - 110 ns VCC = 4.5 V - 6 15 - 19 - 22 ns VCC = 6.0 V 5 13 - 16 - 20 ns CPD power dissipation capacitance per buffer; CL = 50 pF; fi = 1 MHz; VI = GND to VCC [3] -10- - - - - pF 74HCT2G86 tpd propagation delay nA, nB to nY; see Figure 6 [1] VCC = 4.5 V - 11 19 - 23 - 48 ns tt transition time nY; see Figure 6 [2] VCC = 4.5 V - 6 15 - 19 - 22 ns CPD power dissipation capacitance per buffer; CL = 50 pF; fi = 1 MHz; VI = GND to VCC [3] -9- - - - - pF |
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