NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 2 – MARCH 94

FEATURES

* High voltage

APPLICATIONS

* Telephone dialler circuit

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

300

V

Collector-Emitter Voltage

300

V

Emitter-Base Voltage

6V

Continuous Collector Current

500

mA

680

mW

Operating and Storage Temperature Range

-55 to +175

°C

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

300

V

Collector-Emitter

Breakdown Voltage

300

V

Emitter-Base

Breakdown Voltage

6V

Collector Cut-Off

Current

0.1

µ

A

0.1

µ

A

Collector-Emitter

Saturation Voltage

0.5

V

Base-Emitter

Saturation Voltage

0.9

V

Static Forward Current

Transfer Ratio

25

40

40

Transition

Frequency

50

MHz

f=20MHz

Output Capacitance

6pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

E-Line

TO92 Compatible

MPSA42

3-78

C

B

E

Safe operating area

TYPICAL CHARACTERISTICS

0.1

10

100

1.0

60

0.1

10

100

1.0

0

40

80

20

100

120

0.001

100

10

0.01

1A

0.1

1000

1

100ms

10ms

1ms

D.C.

200

0.2

0.1

0.1

10

100

0.3

1.0

200

0

100

40

160

80

60

120

140

20

140

MPSA42

3-79