 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
HAL805UT-A Datasheet(PDF) 6 Page - Micronas |
|
||||||||||||||||||||||||||||||
HAL805UT-A Datasheet(HTML) 6 Page - Micronas |
|
|
6 / 30 page  HAL 805 DATA SHEET 6 Feb. 14, 2006; 6251-513-3DS Micronas 2. Functional Description 2.1. General Function The HAL805 is a monolithic integrated circuit which provides an output voltage proportional to the mag- netic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM regis- ters, converted to an analog voltage with ratiometric behavior, and stabilized by a push-pull output transis- tor stage. The function and the parameters for the DSP are explained in Section 2.2. on page 8. The setting of the LOCK register disables the program- ming of the EEPROM memory for all time. This regis- ter cannot be reset. As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulat- ing the supply voltage (see Fig. 2–1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor gen- erates an analog output voltage. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. The analog output is switched off during the communica- tion. Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin. The open-circuit detection provides a defined output voltage if the VDD or GND line is broken. Internal tem- perature compensation circuitry and the choppered off- set compensation enables operation over the full tem- perature range with minimal changes in accuracy and high offset stability. The circuitry also rejects offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant EEPROM cells. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins. Fig. 2–1: Programming with VDD modulation Fig. 2–2: HAL805 block diagram 5 6 7 8 HAL 805 VDD GND OUT analog VDD digital Internally Temperature Oscillator Switched 100 Ω Digital D/A Analog OUT VDD GND Supply EEPROM Memory Lock Control Digital stabilized Supply and Protection Devices Dependent Bias Protection Devices Hall Plate Signal Processing Converter Output Level Detection Output A/D Converter 10 k Ω Open Circuit Detection |
Similar Part No. - HAL805UT-A |
|
Similar Description - HAL805UT-A |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
