MPSA92 datasheet(2/2 Pages) ZETEX

Part #	MPSA92

Description	PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE2 MARCH 94

FEATURES

* High voltage

APPLICATIONS

* Telephone dialler circuits

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-300

V

Collector-Emitter Voltage

VCEO

-300

V

Emitter-Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-500

mA

Power Dissipation at Tamb= 25°C

Ptot

680

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +175

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-300

V

IC=-100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-300

V

IC=-1mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

V

IE=-10µA, IC=0

Collector Cut-Off

Current

ICBO

-0.25

µ

A

VCB=-200V, IE=0

Emitter Cut-Off Current IEBO

-0.1

µ

A

VEB=-3V, IE=0

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.5

V

IC=-20mA, IB=-2mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-0.9

V

IC=-20mA, IB=-2mA*

Static Forward Current

Transfer Ratio

hFE

25

40

25

IC=-1mA, VCE=10V*

IC=-10mA, VCE=10V*

IC=-30mA,VCE=-10V*

Transition

Frequency

fT

50

MHz

IC=-10mA, VCE=-20V

f=20MHz

Output Capacitance

Cobo

6pF

VCB=-20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

E-Line

TO92 Compatible

MPSA92

3-84

C

B

E

TYPICAL CHARACTERISTICS

Safe operating area

VCE-Collector-Emitter Voltage (Volts)

50

40

0.1

10

100

60

1.0

VCE=10V

110

30

0.1

10

100

1.0

50

90

130

70

150

170

IC-Collector Current (mA)

0

10

1.0

IC / IB=10

1.0

3.0

2.0

100

0.001

100

10

0.01

1A

0.1

1000

1

100ms

10ms

1ms

D.C.

VCE=20V

VCE=10V

Single Pulse Test at Tamb=25°C

VCE(sat) vs IC

hFE vs IC

IC-Collector Current (mA)

fT vs IC

MPSA92

3-85

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