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BAS35 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BAS35
Description  General purpose controlled avalanche (double) diodes
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAS35 Datasheet(HTML) 2 Page - NXP Semiconductors

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2003 Mar 20
2
NXP Semiconductors
Product data sheet
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 90 V
• Repetitive peak reverse voltage: max. 110 V
• Repetitive peak forward current: max. 600 mA
• Repetitive peak reverse current: max. 600 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
MARKING
Note
1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
PINNING
TYPE NUMBER
MARKING CODE(1)
BAS29
L20 or
∗A8
BAS31
L21 or
∗V1
BAS35
L22 or
∗V2
PIN
DESCRIPTION
BAS29
BAS31
BAS35
1
anode
anode
cathode (k1)
2
not connected cathode
cathode (k2)
3
cathode
common
connection
common
anode
handbook, halfpage
21
3
a. Simplified outline.
c. BAS31 diode.
b. BAS29 diode.
d. BAS35 diode.
MAM233
1
2
3
1
2
3
1
2
n.c.
3
Fig.1 Simplified outline (SOT23) and symbols.


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