BC848_SER_7

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 07 — 17 November 2009

3 of 12

NXP Semiconductors

BC848 series

30 V, 100 mA NPN general-purpose transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

30

V

collector-emitter voltage

open base

-

30

V

emitter-base voltage

open collector

-

5

V

collector current

-

100

mA

peak collector current

single pulse;

-200

mA

peak base current

single pulse;

-200

mA

total power dissipation

[1]

SOT23

-

250

mW

SOT323

-

200

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1]

SOT23

-

-

500

K/W

SOT323

-

-

625

K/W