2004 Jan 16

3

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BC856; BC857; BC858

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1.

Transistor mounted on an FR4 printed-circuit board, standard footprint.

THERMAL CHARACTERISTICS

Note

1.

Transistor mounted on an FR4 printed-circuit board, standard footprint.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC856

−

−80

V

BC857

−

−50

V

BC858

−

−30

V

collector-emitter voltage

open base

BC856

−

−65

V

BC857

−

−45

V

BC858

−

−30

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

−

−100

mA

peak collector current

−

−200

mA

peak base current

−

−200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

thermal resistance from junction to

ambient

in free air; note 1

500

K/W