2004 Nov 08

3

NXP Semiconductors

Product data sheet

NPN medium power transistor;

20 V, 1 A

BC868

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1.

Refer to SOT89 standard mounting conditions.

2.

Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.

3.

4.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

32

V

collector-emitter voltage

open base

−

20

V

emitter-base voltage

open collector

−

5

V

collector current (DC)

−

1

A

peak collector current

−

2

A

peak base current

−

200

mA

total power dissipation

notes 1 and 2

−

0.5

W

notes 1 and 3

−

0.85

W

notes 1 and 4

−

1.2

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ambient temperature

−65

+150

°C

handbook, halfpage

-65

-5

Tamb (°C)

Ptot

(W)

55

(1)

(2)

(3)

175

1.6

1.2

0.4

0

0.8

115

MLE323

Fig.1 Power derating curves.

(3) Standard footprint.