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BCM847DS Datasheet(PDF) 3 Page - NXP Semiconductors |
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BCM847DS Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 15 page BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 3 of 15 NXP Semiconductors BCM847BV/BS/DS NPN/NPN matched double transistors 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; tp ≤ 1ms - 200 mA Ptot total power dissipation Tamb ≤ 25 °C SOT666 [1][2] - 200 mW SOT363 [1] - 200 mW SOT457 [1] - 250 mW Per device Ptot total power dissipation Tamb ≤ 25 °C SOT666 [1][2] - 300 mW SOT363 [1] - 300 mW SOT457 [1] - 380 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air SOT666 [1][2] - - 625 K/W SOT363 [1] - - 625 K/W SOT457 [1] - - 500 K/W |
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