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BGU7003 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BGU7003 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 17 page BGU7003_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 2 March 2009 6 of 17 NXP Semiconductors BGU7003 Wideband silicon germanium low-noise amplifier MMIC Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 4. Insertion power gain ( |s21|2) as a function of frequency; typical values Fig 5. Isolation ( |s12|2) as a function of frequency; typical values f (MHz) 0 6000 4000 2000 001aaj655 10 20 30 |s21|2 (dB) 0 f (MHz) 0 6000 4000 2000 001aaj657 −40 −20 0 |s12|2 (dB) −60 Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω. Fig 6. Rollet’s stability factor as a function of frequency; typical values Fig 7. Minimum noise figure as a function of frequency; typical values 001aaj659 1 K 10−1 f (MHz) 0 6000 4000 2000 001aaj660 f (MHz) 0 6000 4000 2000 1.0 0.5 1.5 2.0 NFmin (dB) 0 |
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