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BLD6G22LS-50 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLD6G22LS-50 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page BLD6G22L-50_BLD6G22LS-50_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Objective data sheet Rev. 02 — 18 March 2010 4 of 16 NXP Semiconductors BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor 7. Characteristics 8. Application information 8.1 Ruggedness in Doherty operation The BLD6G22L-50 and BLD6G22LS-50 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS =28V; IDq =170 mA; PL = 8 W (W-CDMA); f = 2140 MHz. Table 6. Characteristics Valid for both main and peak device. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.62mA 65 - - V VGS(th) gate-source threshold voltage VDS =10V; ID = 31 mA 1.4 1.8 2.4 V VGSq gate-source quiescent voltage VDS =28V; ID = 170 mA 1.55 2.05 2.55 V IDSS drain leakage current VGS =0V; VDS = 28 V --1.4 μA IDSX drain cut-off current VGS =VGS(th) +3.75 V; VDS =10V 4.6 5.1 - A IGSS gate leakage current VGS =11V; VDS = 0 V --140 nA gfs forward transconductance VDS =10V; ID = 1.55 A 1.4 2.2 - S RDS(on) drain-source on-state resistance VGS =VGS(th) +3.75 V; ID =1.085 A - 0.52 0.736 Ω Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 8.3 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz; f = 2140 MHz; RF performance at VDS = 28 V; IDq = 170 mA; VGS(amp)peak =0V; Tcase = 25 °C; unless otherwise specified; in a production circuit. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - 8 - W Gp power gain PL(AV) = <tbd> <tbd> 13.3 - dB η D drain efficiency PL(AV) = <tbd> <tbd> 38 - % PARO output peak-to-average ratio PL(AV) = <tbd> <tbd> 7.6 - dB RLin input return loss PL(AV) = <tbd> <tbd> 20 - dB ACPR adjacent channel power ratio PL(AV) = <tbd> - −30 <tbd> dBc |
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