BLD6G22L-50_BLD6G22LS-50_2

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© NXP B.V. 2010. All rights reserved.

Objective data sheet

Rev. 02 — 18 March 2010

4 of 16

NXP Semiconductors

BLD6G22L-50; BLD6G22LS-50

W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor

7.

Characteristics

8.

Application information

8.1 Ruggedness in Doherty operation

The BLD6G22L-50 and BLD6G22LS-50 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

Table 6.

Characteristics

Valid for both main and peak device.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

65

-

-

V

gate-source threshold voltage

1.4

1.8

2.4

V

gate-source quiescent voltage

1.55 2.05 2.55

V

drain leakage current

--1.4

μA

drain cut-off current

4.6

5.1

-

A

gate leakage current

--140

nA

forward transconductance

1.4

2.2

-

S

drain-source on-state resistance

-

0.52 0.736

Ω

Table 7.

Application information

Mode of operation: 2-carrier W-CDMA; PAR 8.3 dB at 0.01 % probability on CCDF;

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

average output power

-

8

-

W

power gain

<tbd>

13.3

-

dB

η

D

drain efficiency

<tbd>

38

-

%

output peak-to-average ratio

<tbd>

7.6

-

dB

input return loss

<tbd>

20

-

dB

ACPR

adjacent channel power ratio

-

−30

<tbd>

dBc