BLF4G22LS-130 datasheet(3/13 Pages) NXP

Part #	BLF4G22LS-130

Description	UHF power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLF4G22-130_4G22LS-130_1

Product data sheet

Rev. 01 — 3 July 2007

3 of 13

NXP Semiconductors

BLF4G22-130; BLF4G22LS-130

UHF power LDMOS transistor

5.

Thermal characteristics

6.

Characteristics

7.

Application information

7.1 Ruggedness in class-AB operation

The BLF4G22-130 and the BLF4G22LS-130 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS = 28 V; IDq = 1150 mA; PL = 130 W (CW).

Table 5:

Thermal characteristics

Symbol

Parameter

Conditions

Type

Typ

Max

Unit

Rth(j-case)

thermal resistance from

junction to case

Tcase =80 °C;

PL =33W

BLF4G22-130

0.56

0.65

K/W

BLF4G22LS-130

0.50

0.59

K/W

Table 6.

Characteristics

Tj = 25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID = 2.1 mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 230 mA

2.5

3.1

3.5

V

IDSS

drain leakage current

VGS =0V; VDS = 28 V

--5

µA

IDSX

drain cut-off current

VGS =VGS(th) +6 V;

VDS =10V

35

44

-

A

IGSS

gate leakage current

VGS = +15 V; VDS = 0 V

-

420

nA

gfs

forward transconductance

VDS = 10 V; ID = 12.8 A

-

11

-

S

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 6 V;

ID = 7.7 A

-

0.07

-

Ω

Crs

feedback capacitance

VGS =0V; VDS =28V;

f = 1 MHz

-

3.4

-

pF

Table 7.

Application information

Mode of operation: 2-carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF,

3GPP test model 1, 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz;

f4 = 2167.5 MHz.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Gp

power gain

PL(AV) = 33 W

12.5

13.5

-

dB

RLin

input return loss

PL(AV) =33W

−9

−15

-

dB

ηD

drain efﬁciency

PL(AV) =33W

24

26

-

%

IMD3

third order intermodulation

distortion

PL(AV) =33W

-

−37

−34 dBc

ACPR

adjacent channel power ratio

PL(AV) =33W

-

−41

−39 dBc

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BLF4G22LS-130 Datasheet(PDF) 3 Page - NXP Semiconductors

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