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BLF4G22LS-130 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF4G22LS-130 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page BLF4G22-130_4G22LS-130_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 3 July 2007 3 of 13 NXP Semiconductors BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Ruggedness in class-AB operation The BLF4G22-130 and the BLF4G22LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1150 mA; PL = 130 W (CW). Table 5: Thermal characteristics Symbol Parameter Conditions Type Typ Max Unit Rth(j-case) thermal resistance from junction to case Tcase =80 °C; PL =33W BLF4G22-130 0.56 0.65 K/W BLF4G22LS-130 0.50 0.59 K/W Table 6. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 2.1 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 230 mA 2.5 3.1 3.5 V IDSS drain leakage current VGS =0V; VDS = 28 V --5 µA IDSX drain cut-off current VGS =VGS(th) +6 V; VDS =10V 35 44 - A IGSS gate leakage current VGS = +15 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 12.8 A - 11 - S RDS(on) drain-source on-state resistance VGS =VGS(th) + 6 V; ID = 7.7 A - 0.07 - Ω Crs feedback capacitance VGS =0V; VDS =28V; f = 1 MHz - 3.4 - pF Table 7. Application information Mode of operation: 2-carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 33 W 12.5 13.5 - dB RLin input return loss PL(AV) =33W −9 −15 - dB ηD drain efficiency PL(AV) =33W 24 26 - % IMD3 third order intermodulation distortion PL(AV) =33W - −37 −34 dBc ACPR adjacent channel power ratio PL(AV) =33W - −41 −39 dBc |
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