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PTH08T220WAZT Datasheet(PDF) 6 Page - Texas Instruments |
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PTH08T220WAZT Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 38 page  ELECTRICAL CHARACTERISTICS PTH08T220W, PTH08T221W SLTS252K – NOVEMBER 2005 – REVISED JUNE 2009................................................................................................................................................... www.ti.com PTH08T221W (ceramic capacitors) TA = 25°C, VI = 5 V, VO = 3.3 V, CI = 300 µF ceramic, CO = 300 µF ceramic, and IO = IO max (unless otherwise stated) PARAMETER TEST CONDITIONS PTH08T221W UNIT MIN TYP MAX IO Output current Over VO range 25°C, natural convection 0 16 A 0.69 ≤ VO ≤ 1.2 4.5 14 (1) VI Input voltage range Over IO range 1.2 < VO ≤ 3.6 4.5 14 V 3.6 < VO ≤ 5.5 VO + 2 14 VOADJ Output voltage adjust range Over IO range 0.69 5.5 V Set-point voltage tolerance ±0.5 ±1 (2) %Vo Temperature variation –40°C < TA < 85°C ±0.3 %Vo VO Line regulaltion Over VI range ±3 mV Load regulation Over IO range ±2 mV Total output variation Includes set-point, line, load, –40°C ≤ TA ≤ 85°C ±1.5 (2) %Vo RSET = 171 Ω, VI = 8 V, VO = 5.0 V 95% RSET = 1.21 kΩ, VO = 3.3 V 94% RSET = 2.38 kΩ, VO = 2.5 V 91% η Efficiency IO = 16 A RSET = 4.78 kΩ, VO = 1.8 V 88% RSET = 7.09 kΩ, VO = 1.5 V 87% RSET = 12.1 kΩ, VO = 1.2 V (1) 84% RSET = 20.8 kΩ, VO = 1.0 V (1) 82% VO Ripple (peak-to-peak) 20-MHz bandwidth 15 (1) mVPP ILIM Overcurrent threshold Reset, followed by auto-recovery 32 A ttr Recovery time 70 µs w/o TurboTrans CO= 300 µF, TypeA ΔVtr 2.5 A/µs load step VO over/undershoot 150 mV Transient response 50 to 100% IOmax ttrTT w/ TurboTrans Recovery time 200 µs VO = 2.5 V CO= 1500 µF, TypeA mV ΔVtrTT VO over/undershoot 65 RTT = short IIL Track input current (pin 10) Pin to GND –130(3) µA dVtrack/dt Track slew rate capability CO ≤ CO (max) 1 V/ms VI increasing, RUVLO = OPEN 4.3 4.45 Adjustable Under-voltage lockout UVLOADJ VI decreasing, RUVLO = OPEN 3.7 4.2 V (pin 11) Hysteresis, RUVLO ≤ 52.3 kΩ 0.5 Input high voltage (VIH) Open(4) V Inhibit control (pin 11) Input low voltage (VIL) -0.2 0.8 Input low current (IIL ), Pin 11 to GND -235 µA Iin Input standby current Inhibit (pin 11) to GND, Track (pin 10) open 5 mA f s Switching frequency Over VI and IO ranges, SmartSync (pin 1) to GND 300 kHz Synchronization (SYNC) fSYNC 240 400 kHz frequency VSYNCH SYNC High-Level Input Voltage 2 5.5 V VSYNCL SYNC Low-Level Input Voltage 0.8 V tSYNC SYNC Minimum Pulse Width 200 nSec CI External input capacitance 300 (5) µF (1) For output voltages ≤ 1.2 V, at nominal operating frequency, the output ripple may increase (typically 2×) when operating at input voltages greater than (VO × 11). When using the SmartSync feature to adjust the switching frequency, see the SmartSync Considerations section of the datasheet for further guidance. (2) The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a tolerance of 1% with 100 ppm/C or better temperature stability. (3) A low-leakage (<100 nA), open-drain device, such as MOSFET or voltage supervisor IC, is recommended to control pin 10. The open-circuit voltage is less than 8 Vdc. (4) Do not place an external pull-up on this pin. If it is left open-circuit, the module operates when input power is applied. A small, low-leakage (<100 nA) MOSFET is recommended for control. For additional information, see the related application section. (5) 300 µF of input capacitance is required for proper operation. 300 µF of ceramic or 330 µF of electrolytic input capacitance can be used. Electrolytic capacitance must be rated for a minimum of 700 mA rms of ripple current. An additional 22- µF ceramic input capacitor is recommended to reduce rms ripple current. 6 Submit Documentation Feedback Copyright © 2005–2009, Texas Instruments Incorporated Product Folder Link(s): PTH08T220W PTH08T221W |
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