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BLF6G20LS-140 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BLF6G20LS-140 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page BLF6G20LS-140_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 27 February 2009 2 of 8 NXP Semiconductors BLF6G20LS-140 Power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information [1] Connected to flange. 3. Ordering information 4. Limiting values 5. Thermal characteristics Table 2. Pinning Pin Description Simplified outline Graphical symbol 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 Table 3. Ordering information Type number Package Name Description Version BLF6G20LS-140 - earless flanged LDMOST ceramic package; 2 leads SOT502B Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 39 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-case) thermal resistance from junction to case Tcase =80 °C; PL = 35 W 0.49 K/W |
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