PSMN026-80YS datasheet(7/14 Pages) NXP

Part #	PSMN026-80YS

Description	N-channel LFPAK 80 V 27.5 m廓 standard level MOSFET

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PSMN026-80YS_1

Product data sheet

Rev. 01 — 25 June 2009

7 of 14

NXP Semiconductors

PSMN026-80YS

N-channel LFPAK 80 V 27.5 m

Ω standard level MOSFET

[1]

Tested to JEDEC standards where applicable.

Source-drain diode

VSD

source-drain voltage

IS =5A; VGS =0V; Tj =25°C;

see Figure 17

-0.8

1.2

V

trr

reverse recovery time

IS =15A; dIS/dt = 100 A/µs; VGS =0V;

VDS =40V

-36

-

ns

Qr

recovered charge

-

52

-

nC

Table 6.

Characteristics …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aad270

0

20

40

60

80

01

23

45

VDS (V)

ID

(A)

10

8

5.5

5

6

VGS (V) = 4.5

20

003aad276

400

800

1200

1600

2000

036

9

12

VGS (V)

C

(pF)

Ciss

Crss

003aad272

0

10

20

30

40

50

0246

VGS (V)

ID

(A)

Tj = 150

°C

Tj = 25

°C

Tj = 175

°C

003aad278

20

30

40

50

60

4

8

12

16

20

VGS (V)

RDSon

(m

Ω)

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PSMN026-80YS Datasheet(PDF) 7 Page - NXP Semiconductors

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