BLF6G22-180RN datasheet(3/11 Pages) NXP

Part #	BLF6G22-180RN

Description	Power LDMOS transistor

Download	11 Pages

Scroll/Zoom	100%

Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

3 / 11 page

BLF6G22-180RN_22LS-180RN_1

Product data sheet

Rev. 01 — 20 November 2008

3 of 11

NXP Semiconductors

BLF6G22(LS)-180RN

Power LDMOS transistor

5.

Thermal characteristics

6.

Characteristics

7.

Application information

7.1 Ruggedness in class-AB operation

The BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS = 30 V; IDq = 1400 mA; PL = 180 W (CW); f = 2170 MHz.

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Type

Typ

Unit

Rth(j-case)

thermal resistance from

junction to case

Tcase =80 °C;

PL =40W

BLF6G22-180RN

0.50

K/W

BLF6G22LS-180RN

0.37

K/W

Table 6.

Characteristics

Tj = 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID = 0.9 mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS =10V;ID = 270 mA

1.4

2.0

2.4

V

VGSq

gate-source quiescent voltage

VDS = 28 V; ID = 1.62 A

1.5

2.0

2.5

V

IDSS

drain leakage current

VGS =0V; VDS =28V

-

5

µA

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

40

45

-

A

IGSS

gate leakage current

VGS = 13 V; VDS = 0 V

-

450

nA

gfs

forward transconductance

VDS =10V; ID = 13.5 A

-

19.5

-

S

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 3.75 V;

ID = 9.45 A

-

0.06

-

Ω

Crs

feedback capacitance

VGS =0V; VDS =30V;

f= 1MHz

-

3.3

-

pF

Table 7.

Application information

Mode of operation: 2-carrier W-CDMA; PAR = 7 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;

RF performance at VDS =30V; IDq = 1400 mA; Tcase =25 °C; unless otherwise speciﬁed; in a

class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

PL(AV)

average output power

-

40

-

W

Gp

power gain

PL(AV) = 40 W

15.0

16.0 -

dB

RLin

input return loss

PL(AV) =40W

-

−11 −8dB

ηD

drain efﬁciency

PL(AV) =40W

22

25

-

%

IMD3

third order intermodulation distortion

PL(AV) =40W

-

−38 −34.5 dBc

ACPR

adjacent channel power ratio

PL(AV) =40W

-

−42 −39

dBc

Similar Part No. - BLF6G22-180RN

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BLF6G22-180RN	9Mb / 130P	RF Manual 16th edition June 2012

More results

Similar Description - BLF6G22-180RN

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BLF6G20-110	74Kb / 9P	Power LDMOS transistor Rev. 01-28 January 2008
	BLF7G22L-130	180Kb / 15P	Power LDMOS transistor Rev. 3-18 November 2010
	BLF6G20-45	88Kb / 12P	Power LDMOS transistor Rev. 02-25 August 2008
	BLF6G20-110	90Kb / 10P	Power LDMOS transistor Rev. 03-13 January 2009
	BLF2425M7L140	299Kb / 11P	Power LDMOS transistor Rev. 3-6 September 2012
	BLF188XR	227Kb / 15P	Power LDMOS transistor Rev. 5-12 November 2013
	BLF6G22LS-130	87Kb / 11P	Power LDMOS transistor Rev. 01-23 May 2008
	BLF6G20LS-140	74Kb / 8P	Power LDMOS transistor Rev. 01-27 February 2009
	BLF7G10L-250	714Kb / 13P	Power LDMOS transistor Rev. 4-13 September 2012
	BLA6G1011-200R	185Kb / 13P	Power LDMOS transistor Rev. 5-17 March 2015
	BLP8G20S-80P	158Kb / 11P	Power LDMOS transistor Rev. 2-13 October 2014

More results

BLF6G22-180RN Datasheet(PDF) 3 Page - NXP Semiconductors

BLF6G22-180RN Datasheet(HTML) 3 Page - NXP Semiconductors

Similar Part No. - BLF6G22-180RN

Similar Description - BLF6G22-180RN

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL