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BLF881 Datasheet(PDF) 7 Page - NXP Semiconductors

Part # BLF881
Description  UHF power LDMOS transistor
Download  18 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BLF881 Datasheet(HTML) 7 Page - NXP Semiconductors

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BLF881_BLF881S_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2010
7 of 18
NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
7.2 Broadband RF figures
7.2.1 DVB-T
7.3 Ruggedness in class-AB operation
The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V;
f = 860 MHz at rated power. Ruggedness is measured in the application circuit as
described in Section 8.
VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a
common-source broadband test circuit as described in
Section 8.
VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a
common-source broadband test circuit as described in
Section 8.
Fig 7.
DVB-T PAR at 0.01 % probability on the CCDF
and drain efficiency as function of frequency;
typical values
Fig 8.
DVB-T power gain and shoulder distance as
function of frequency; typical values
f (MHz)
400
900
800
600
700
500
001aal080
7.0
8.0
9.0
PAR
(dB)
6.0
30
40
50
ηD
(%)
20
PAR
ηD
f (MHz)
400
900
800
600
700
500
001aal081
19
21
17
23
25
Gp
(dB)
15
−30
−20
−40
−10
0
IMDshdr
(dBc)
−50
Gp
IMDshdr


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