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BLF881 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLF881 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 18 page BLF881_BLF881S_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 10 February 2010 7 of 18 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application circuit as described in Section 8. VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8. VDS = 50 V; IDq = 0.35 A; PL(AV) = 33 W; measured in a common-source broadband test circuit as described in Section 8. Fig 7. DVB-T PAR at 0.01 % probability on the CCDF and drain efficiency as function of frequency; typical values Fig 8. DVB-T power gain and shoulder distance as function of frequency; typical values f (MHz) 400 900 800 600 700 500 001aal080 7.0 8.0 9.0 PAR (dB) 6.0 30 40 50 ηD (%) 20 PAR ηD f (MHz) 400 900 800 600 700 500 001aal081 19 21 17 23 25 Gp (dB) 15 −30 −20 −40 −10 0 IMDshdr (dBc) −50 Gp IMDshdr |
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