BLL6H1214-500_2

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 02 — 1 April 2010

7 of 20

NXP Semiconductors

BLL6H1214-500

LDMOS L-band radar power transistor

7.2.2 Performance curves measured with

(1) f = 1200 MHz

(2) f = 1300 MHz

(3) f = 1400 MHz

(1) f = 1200 MHz

(2) f = 1300 MHz

(3) f = 1400 MHz

Fig 7.

Output power as a function of input power;

typical values

Fig 8.

Power gain as a function of load power;

typical values

(1) f = 1200 MHz

(2) f = 1300 MHz

(3) f = 1400 MHz

μs; δ = 10 %;

Fig 9.

Drain efficiency as a function of load power;

typical values

Fig 10. Power gain and drain efficiency as function of

frequency; typical values

018

12

6

001aak756

700

(W)

0

100

200

300

400

500

600

(1)

(2)

(3)

0

200

400

600

700

500

300

100

001aak757

6

12

18

(dB)

0

(1)

(2)

(3)

0

200

400

600

700

500

300

100

001aak758

20

40

60

(%)

0

(1)

(2)

(3)

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f (GHz)

1.15

1.45

1.35

1.25

14

16

12

18

20

(dB)

10

25

35

15

45

55

(%)

5