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BLL1214-250R Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BLL1214-250R
Description  LDMOS L-band radar power transistor
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BLL1214-250R Datasheet(HTML) 6 Page - NXP Semiconductors

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BLL1214-250R_1
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
6 of 12
NXP Semiconductors
BLL1214-250R
LDMOS L-band radar power transistor
8.
Test information
8.1 RF performance
tp = 1 ms; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 100 μs; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
Fig 3.
Output power as a function of input power;
typical values
Fig 4.
Output power as a function of input power;
typical values
tp = 1 ms; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
tp = 100 μs; δ = 10 %.
(1) f = 1.2 GHz.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
Fig 5.
Power gain as a function of load power;
typical values
Fig 6.
Power gain as a function of load power;
typical values
mld858
048
Pi (W)
PL
(W)
16
300
0
100
200
12
(1)
(3)
(2)
mld859
048
Pi (W)
PL
(W)
16
300
0
100
200
12
(1)
(3)
(2)
mld860
0
100
PL (W)
Gp
(dB)
300
16
12
4
0
8
200
(3)
(1)
(2)
mld861
0
100
PL (W)
Gp
(dB)
300
16
12
4
0
8
200
(3)
(1)
(2)


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