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ZRA245R02 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZRA245R02 Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 5 page ABSOLUTE MAXIMUM RATING Reverse Current 200mA Forward Current 25mA Operating Temperature -40 to 85°C Storage Temperature -55 to 125°C Power Dissipation (Tamb=25°C) SOT23 330mW E-Line, 3 pin (TO92) 500mW E-Line, 2 pin (TO92) 500mW SO8 625mW ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated) Tamb=25°C SYMBOL PARAMETER CONDITIONS LIMITS TOL. % UNITS MIN TYP MAX VR Reverse Breakdown Voltage I R=5mA 2.43 2.40 2.38 2.45 2.45 2.45 2.47 2.50 2.52 1 2 3 V IMIN Minimum Operating Current 2 mA IR Recommended Operating Current 2 120 mA TC † Average Reverse Breakdown Voltage Temp. Co. IR(min) to IR(max) 15 50 ppm/°C RS § Slope Resistance 0.26 0.5 Ω ZR Reverse Dynamic Impedance IR =5mA f = 100Hz IAC=0.1 IR 0.28 1 Ω EN Wideband Noise Voltage IR= 5mA f = 10Hz to 10kHz 65 µV(rms) ZRA245 † TC = (VR(max)−VR(min)) x 1000000 VR x (T(max)−T(min)) Note: VR(max) - VR(min) is the maximum deviation in reference voltage measured over the full operating temperature range. § RS = VR Change(IR (min) to IR (max)) IR (max) − IR (min) 4-228 |
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