BSP62 datasheet(3/7 Pages) NXP

Part #	BSP62

Description	PNP Darlington transistors

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 7 page

2001 May 31

3

NXP Semiconductors

Product data sheet

PNP Darlington transistors

BSP60; BSP61; BSP62

THERMAL CHARACTERISTICS

Note

1.

Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

98

K/W

Rth j-s

thermal resistance from junction to solder point

17

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICES

collector cut-off current

BSP60

VBE = 0; VCE = −45 V

−

−50

nA

BSP61

VBE = 0; VCE = −60 V

−

−50

nA

BSP62

VBE = 0; VCE = −80 V

−

−50

nA

IEBO

emitter cut-off current

IC = 0; VEB = −4 V

−

−50

nA

hFE

DC current gain

VCE = −10 V; note 1; see Fig.2

IC = −150 mA

1000

−

IC = −500 mA

2000

−

VCEsat

collector-emitter saturation

voltage

IC = −500 mA; IB = −0.5 mA

−

−1.3

V

IC = −500 mA; IB = −0.5 mA;

Tj = 150 °C

−

−1.3

V

VBEsat

base-emitter saturation voltage

IC = −500 mA; IB = −0.5 mA

−

−1.9

V

fT

transition frequency

IC = −500 mA; VCE = −5 V;

f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels); see Fig.3

ton

turn-on time

ICon = −500 mA; IBon = −0.5 mA;

IBoff = 0.5 mA

−

400

−

ns

toff

turn-off time

−

1500

−

ns

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