BUK9Y12-55B datasheet(2/14 Pages) NXP

Part #	BUK9Y12-55B

Description	N-channel TrenchMOS logic level FET

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Manufacturer	NXP [NXP Semiconductors]

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BUK9Y12-55B

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Product data sheet

Rev. 04 — 7 April 2010

2 of 14

NXP Semiconductors

BUK9Y12-55B

N-channel TrenchMOS logic level FET

2.

Pinning information

3.

Ordering information

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =61.8 A; Vsup ≤ 55 V;

RGS =50 Ω; VGS =5V;

Tj(init) = 25 °C; unclamped

--129

mJ

Dynamic characteristics

QGD

gate-drain charge

VGS =5V; ID =20A;

VDS =44 V; Tj =25°C; see

Figure 14

-13

-

nC

Table 1.

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1S

source

SOT669 (LFPAK)

2S

source

3S

source

4

G

gate

mb

D

mounting base; connected to

drain

mb

1234

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK9Y12-55B

LFPAK

plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

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