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BUK9Y12-55B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK9Y12-55B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page BUK9Y12-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 7 April 2010 2 of 14 NXP Semiconductors BUK9Y12-55B N-channel TrenchMOS logic level FET 2. Pinning information 3. Ordering information Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =61.8 A; Vsup ≤ 55 V; RGS =50 Ω; VGS =5V; Tj(init) = 25 °C; unclamped --129 mJ Dynamic characteristics QGD gate-drain charge VGS =5V; ID =20A; VDS =44 V; Tj =25°C; see Figure 14 -13 - nC Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source SOT669 (LFPAK) 2S source 3S source 4 G gate mb D mounting base; connected to drain mb 1234 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK9Y12-55B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 |
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