BUK9Y27-40B

N-channel TrenchMOS logic level FET

Rev. 04 — 7 April 2010

Product data sheet

1.

Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Suitable for logic level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V loads

Automotive systems

General purpose power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source

voltage

--40

V

drain current

see Figure 1; see Figure 4

--34

A

total power

dissipation

--59.4

W

Static characteristics

drain-source

on-state

resistance

see Figure 13

-

2227m

Ω

-

1824m

Ω