BUK752R3-40C

N-channel TrenchMOS standard level FET

Rev. 03 — 26 January 2009

Product data sheet

1.

Product profile

1.1 General description

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using advanced TrenchMOS technology. This product has been designed

and qualified to the appropriate AEC standard for use in high performance automotive

applications.

1.2 Features and benefits

AEC Q101 compliant

Avalanche robust

Suitable for standard level gate drive

Suitable for thermally demanding

environment up to 175°C rating

1.3 Applications

12V Motor, lamp and solenoid loads

High performance automotive power

systems

High performance Pulse Width

Modulation applications

1.4 Quick reference data

[1]

Refer to document 9397 750 12572 for further information.

[2]

Continuous current is limited by package.

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

40

V

drain current

see Figure 1; see Figure 3;

[1]

[2]

--

100

A

total power dissipation

--

333

W

Dynamic characteristics

gate-drain charge

-67

-

nC

Static characteristics

drain-source on-state

resistance

see Figure 13

-

1.96

2.3

m

Ω

Avalanche ruggedness

drain-source avalanche

energy

--

1.2

J