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BUK9520-100B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK9520-100B Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page BUK9520-100B_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 May 2009 5 of 12 NXP Semiconductors BUK9520-100B N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj =25°C 100 - - V ID =0.25mA; VGS =0V; Tj =-55 °C 90 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS = VGS; Tj =25°C; see Figure 10 11.58 2 V ID =1mA; VDS = VGS; Tj = 175 °C; see Figure 10 0.5 - - V ID =1mA; VDS = VGS; Tj =-55 °C; see Figure 10 --2.3 V IDSS drain leakage current VDS =100 V; VGS =0V; Tj = 175 °C - - 500 µA VDS =100 V; VGS =0V; Tj = 25 °C - 0.05 1 µA IGSS gate leakage current VDS =0V; VGS =-10 V; Tj = 25 °C - 2 100 nA VDS =0V; VGS =10V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =4.5 V; ID =25A; Tj =25°C; see Figure 11; see Figure 12 - 16.4 22.3 m Ω VGS =10V; ID =25A; Tj =25°C; see Figure 11; see Figure 12 - 15.6 18.5 m Ω VGS =5V; ID =25A; Tj =175 °C; see Figure 12; see Figure 11 --50 m Ω VGS =5V; ID =25A; Tj =25°C; see Figure 12; see Figure 11 - 16.2 20 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =80V; VGS =5V; Tj =25°C; see Figure 14; see Figure 15 - 53.4 - nC QGS gate-source charge - 9.5 - nC QGD gate-drain charge - 21.2 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 16 - 4300 5657 pF Coss output capacitance - 340 411 pF Crss reverse transfer capacitance - 150 201 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25 °C -45 - ns tr rise time - 116 - ns td(off) turn-off delay time - 173 - ns tf fall time - 77 - ns LD internal drain inductance from drain lead 6 mm from package to centre of die; Tj =25°C -4.5 - nH from upper edge of drain mounting base to centre of die; Tj =25°C -2.5 - nH LS internal source inductance from source lead to source bond pad; Tj =25°C -7.5 - nH |
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