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BZV85-C16 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BZV85-C16 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 10 page BZV85_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 10 November 2009 6 of 10 NXP Semiconductors BZV85 series Voltage regulator diodes (1) tp =10 µs; half sine wave; Tamb =25 °C (2) tp = 10 ms; half sine wave; Tamb =25 °C (1) Tj = 200 °C (2) Tj =25 °C Fig 2. Non-repetitive peak reverse current as a function of the nominal working voltage Fig 3. Forward current as a function of forward voltage; typical values BZV85-C3V6 to BZV85-C10 Tj =25 °C to 150 °C For types above 7.5 V the temperature coefficient is independent of current; see Table 8. IZ =Itest Tj =25 °C to 150 °C (1) Maximum values (2) Typical values (3) Minimum values Fig 4. Temperature coefficient as a function of working current; typical values Fig 5. Temperature coefficient as a function of working current; typical values mbg802 102 10 VZnom (V) IZSM (A) 10 1102 10−1 1 (1) (2) mbg925 0 1.0 300 0 100 200 0.5 VF (V) IF (mA) (1) (2) IZ (mA) 050 25 mbg926 0 5 10 SZ (mV/K) −5 6V2 5V6 5V1 4V7 4V3 3V6 3V9 6V8 7V5 8V2 9V1 10 mbg800 100 0 102 10 VZnom (V) SZ (mV/K) 1 20 40 60 80 (2) (1) (3) |
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