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GTL2010 Datasheet(PDF) 8 Page - NXP Semiconductors |
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GTL2010 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 20 page GTL2010_6 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 06 — 3 March 2008 8 of 20 NXP Semiconductors GTL2010 10-bit bidirectional low voltage translator 9. Limiting values [1] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C. [2] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. 10. Recommended operating conditions [1] VSREF ≤ VDREF − 1.5 V for best results in level shifting applications. Table 7. Limiting values[1] In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VSREF voltage on pin SREF [2] −0.5 +7.0 V VDREF voltage on pin DREF [2] −0.5 +7.0 V VGREF voltage on pin GREF [2] −0.5 +7.0 V VSn voltage on port Sn [2] −0.5 +7.0 V VDn voltage on port Dn [2] −0.5 +7.0 V IREFK diode current on reference pins VI <0V - −50 mA ISK diode current Port Sn VI <0V - −50 mA IDK diode current Port Dn VI <0V - −50 mA IMAX clamp current per channel channel in ON-state - ±128 mA Tstg storage temperature −65 +150 °C Table 8. Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit VI/O voltage on an input/output pin Sn, Dn 0 - 5.5 V VSREF voltage on pin SREF [1] 0 - 5.5 V VDREF voltage on pin DREF 0 - 5.5 V VGREF voltage on pin GREF 0 - 5.5 V IPASS pass transistor current - - 64 mA Tamb ambient temperature operating in free air −40 - +85 °C |
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