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ADS1114 Datasheet(PDF) 2 Page - Texas Instruments |
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ADS1114 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 36 page ADS1113 ADS1114 ADS1115 SBAS444B – MAY 2009 – REVISED OCTOBER 2009 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) ADS1113, ADS1114, ADS1115 UNIT VDD to GND –0.3 to +5.5 V Analog input current 100, momentary mA Analog input current 10, continuous mA Analog input voltage to GND –0.3 to VDD + 0.3 V SDA, SCL, ADDR, ALERT/RDY voltage to GND –0.5 to +5.5 V Maximum junction temperature +150 °C Storage temperature range –60 to +150 °C (1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability. PRODUCT FAMILY PACKAGE INPUT CHANNELS DESIGNATOR RESOLUTION MAXIMUM SAMPLE (Differential/ DEVICE MSOP/QFN (Bits) RATE (SPS) COMPARATOR PGA Single-Ended) ADS1113 BROI/N6J 16 860 No No 1/1 ADS1114 BRNI/N5J 16 860 Yes Yes 1/1 ADS1115 BOGI/N4J 16 860 Yes Yes 2/4 ADS1013 BRMI/N9J 12 3300 No No 1/1 ADS1014 BRQI/N8J 12 3300 Yes Yes 1/1 ADS1015 BRPI/N7J 12 3300 Yes Yes 2/4 2 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): ADS1113 ADS1114 ADS1115 |
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