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DMN6068SE Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN6068SE Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 9 page DMN6068SE Document Number DS32033 Rev. 1 - 2 2 of 9 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source voltage VDSS 60 V Gate-Source voltage (Note 2) VGS ±20 V Single Pulsed Avalanche Energy (Note 7) EAS 37.5 mJ Single Pulsed Avalanche Current (Note 7) IAS 5.0 A Continuous Drain current VGS = 10V (Note 4) ID 5.6 A TA = 70°C (Note 4) 4.5 (Note 3) 4.1 Pulsed Drain current VGS= 10V (Note 5) IDM 20.8 A Continuous Source current (Body diode) (Note 4) IS 4.9 A Pulsed Source current (Body diode) (Note 5) ISM 20.8 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power dissipation Linear derating factor (Note 3) PD 2.0 16.0 W mW/ °C (Note 4) 3.7 29.5 Thermal Resistance, Junction to Ambient (Note 3) RθJA 62.5 °C/W (Note 4) 34 Thermal Resistance, Junction to Lead (Note 6) RθJL 11.5 Operating and storage temperature range TJ, TSTG -55 to 150 °C Notes: 2. AEC-Q101 VGS maximum is ±16V. 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t ≤ 10 sec. 5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). 7. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = 25°C. |
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