ZXMHC3F381N8 datasheet(5/11 Pages) DIODES

Part #	ZXMHC3F381N8

Description	30V SO8 Complementary enhancement mode MOSFET H-Bridge

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Manufacturer	DIODES [Diodes Incorporated]

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ZXMHC3F381N8

Issue 1.0 - March 2009

5

www.diodes.com

N-channel typical characteristics

0.1

1

10

0.01

0.1

1

10

0.1

1

10

0.01

0.1

1

10

23

4

0.01

0.1

1

10

-50

0

50

100

150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

10

0.01

0.1

1

10

100

1000

0.2

0.4

0.6

0.8

1.0

1E-3

0.01

0.1

1

10

4V

4.5V

10V

3.5V

2.5V

Output Characteristics

T = 25°C

3V

V

GS

V

DS

Drain-Source Voltage (V)

10V

4.5V

2V

2.5V

4V

3.5V

3V

Output Characteristics

T = 150°C

V

GS

V

DS

Drain-Source Voltage (V)

Typical Transfer Characteristics

V

DS

= 10V

T = 25°C

T = 150°C

V

GS

Gate-Source Voltage (V)

Normalised Curves v Temperature

R

DS(on)

V

GS

= 10V

I

D

= 5A

V

GS(th)

V

GS

= V

DS

I

D

= 250uA

Tj Junction Temperature (°C)

10V

3.5V

4V

3V

On-Resistance v Drain Current

T = 25°C

2.5V

4.5V

V

GS

I

D

Drain Current (A)

T = 150°C

T = 25°C

Source-Drain Diode Forward Voltage

V

SD

Source-Drain Voltage (V)

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ZXMHC3F381N8 Datasheet(PDF) 5 Page - Diodes Incorporated

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