ZXMHC3F381N8

Issue 1.0 - March 2009

4

© Diodes Incorporated

www.diodes.com

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-Source breakdown

voltage

30

V

Zero Gate voltage Drain

current

0.5

µA

Gate-Body leakage

nA

Gate-Source threshold

voltage

1.0

3.0

V

Static Drain-Source

on-state resistance

(a)

0.033

0.060

Ω

Forward

Transconductance

(a) (c)

11.8

S

Dynamic

Capacitance

(c)

Input capacitance

430

pF

f= 1MHz

Output capacitance

101

pF

Reverse transfer

capacitance

56

pF

Switching

(b) (c)

Turn-on-delay time

2.5

ns

Rise time

3.3

ns

Turn-off delay time

11.5

ns

Fall time

6.3

ns

Gate charge

(c)

Total Gate charge

9.0

nC

Gate-Source charge

1.7

nC

Gate-Drain charge

2.0

nC

Source–Drain diode

Diode forward voltage

(a)

0.82

1.2

V

Reverse recovery time

(c)

12

ns

Reverse recovery charge

(c)

4.9

nC

NOTES:

(a) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%.

(b) Switching characteristics are independent of operating junction temperature.

(c) For design aid only, not subject to production testing