PBHV8540T datasheet(6/12 Pages) NXP

Part #	PBHV8540T

Description	500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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PBHV8540T_2

Product data sheet

Rev. 02 — 14 January 2009

6 of 12

NXP Semiconductors

PBHV8540T

500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor

VCE =10V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 3.

DC current gain as a function of collector

current; typical values

Fig 4.

Collector current as a function of

collector-emitter voltage; typical values

VCE =10V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =5

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 5.

Base-emitter voltage as a function of collector

current; typical values

Fig 6.

Base-emitter saturation voltage as a function

of collector current; typical values

006aab174

200

100

300

400

hFE

0

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

006aab175

VCE (V)

05

4

23

1

0.4

0.6

0.2

0.8

1.0

IC

(A)

0

IB (mA) = 175

35

70

140

105

006aab176

0.8

0.4

1.2

1.6

VBE

(V)

0

IC (mA)

10−1

104

103

1102

10

(1)

(2)

(3)

006aab177

0.5

0.9

1.3

VBEsat

(V)

0.1

IC (mA)

10−1

104

103

1102

10

(1)

(2)

(3)

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