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PBLS6023D Datasheet(PDF) 3 Page - NXP Semiconductors |
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PBLS6023D Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 16 page PBLS6023D_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 13 August 2009 3 of 16 NXP Semiconductors PBLS6023D 60 V, 1.5 A PNP BISS loadswitch 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1; PNP low VCEsat transistor VCBO collector-base voltage open emitter - −60 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector - −5V IC collector current - −1.5 A ICM peak collector current single pulse; tp ≤ 1ms - −3A IB base current - −300 mA IBM peak base current single pulse; tp ≤ 1ms - −1A Ptot total power dissipation Tamb ≤ 25 °C [1] - 370 mW [2] - 480 mW [3] - 630 mW TR2; NPN resistor-equipped transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative - −10 V IO output current - 100 mA ICM peak collector current single pulse; tp ≤ 1ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1][2] [3] - 200 mW Per device Ptot total power dissipation Tamb ≤ 25 °C [1] - 480 mW [2] - 590 mW [3] - 760 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C |
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