PBRN113ZT datasheet(8/17 Pages) NXP

Part #	PBRN113ZT

Description	NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

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Manufacturer	NXP [NXP Semiconductors]

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PBRN113Z_SER_1

Product data sheet

Rev. 01 — 26 February 2007

8 of 17

NXP Semiconductors

PBRN113Z series

NPN 800 mA, 40 V BISS RETs; R1 = 1 k

Ω, R2 = 10 kΩ

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =30V;

IE =0A

-

100

nA

ICEO

collector-emitter cut-off

current

VCE =30V;

IB =0A

-

0.5

µA

IEBO

emitter-base cut-off

current

VEB =5V;

IC =0A

-

0.8

mA

hFE

DC current gain

VCE =5V;

IC =50mA

300

450

-

VCE =5V;

IC = 300 mA

[1] 500

750

-

VCE =5V;

IC = 600 mA

[1] 500

720

-

VCE =5V;

IC = 800 mA

[1] 450

650

-

VCEsat

collector-emitter

saturation voltage

IC = 50 mA;

IB = 2.5 mA

-

2535mV

IC = 200 mA;

IB =10mA

-

6085mV

IC = 500 mA;

IB =10mA

[1] -

160

220

mV

IC = 600 mA;

IB =6mA

[1] -

270

550

mV

IC = 800 mA;

IB =8mA

[1] -

0.56

1.15

V

VI(off)

off-state input voltage

VCE =5V;

IC = 100 µA

0.3

0.5

1

V

VI(on)

on-state input voltage

VCE = 0.3 V;

IC =20mA

0.4

0.7

1.4

V

R1

bias resistor 1 (input)

0.7

1

1.3

k

Ω

R2/R1

bias resistor ratio

9

10

11

Cc

collector capacitance

VCB =10V;

IE =ie =0A;

f=1MHz

-7

-pF

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