 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
PBSS304PD Datasheet(PDF) 7 Page - NXP Semiconductors |
|
||||||||||||||||||||||||||||||
PBSS304PD Datasheet(HTML) 7 Page - NXP Semiconductors |
|
|
7 / 15 page  PBSS304PD_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 March 2009 7 of 15 NXP Semiconductors PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −80 V; IE =0A - - −100 nA VCB = −80 V; IE =0A; Tj = 150 °C -- −50 µA ICES collector-emitter cut-off current VCE = −64 V; VBE =0V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −100 nA hFE DC current gain VCE = −2 V; IC = −500 mA 155 225 - VCE = −2 V; IC = −1A [1] 140 200 - VCE = −2 V; IC = −2A [1] 105 145 - VCE = −2 V; IC = −3A [1] 60 85 - VCE = −2 V; IC = −4A [1] 30 45 - VCE = −2 V; IC = −5A [1] 20 25 - VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA - −55 −75 mV IC = −1 A; IB = −50 mA - −110 −145 mV IC = −2 A; IB = −200 mA [1] - −150 −200 mV IC = −3 A; IB = −150 mA [1] - −315 −415 mV IC = −3 A; IB = −300 mA [1] - −215 −290 mV IC = −4 A; IB = −400 mA [1] - −295 −390 mV IC = −5 A; IB = −500 mA [1] - −410 −540 mV RCEsat collector-emitter saturation resistance IC = −2 A; IB = −200 mA [1] - 75 100 m Ω VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA - −0.78 −0.87 V IC = −1 A; IB = −50 mA - −0.80 −0.89 V IC = −1 A; IB = −100 mA [1] - −0.83 −0.91 V IC = −3 A; IB = −150 mA [1] - −0.92 −0.99 V IC = −3 A; IB = −300 mA [1] - −0.94 −1.01 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2A - −0.80 −1.00 V td delay time VCC = −9.2 V; IC = −2A; IBon = −0.1 A; IBoff = 0.1 A -13 - ns tr rise time - 77 - ns ton turn-on time - 90 - ns ts storage time - 210 - ns tf fall time - 102 - ns toff turn-off time - 312 - ns fT transition frequency VCE = −10 V; IC = −100 mA; f = 100 MHz - 110 - MHz Cc collector capacitance VCB = −10 V; IE =ie =0A; f=1MHz -45 - pF |
Similar Part No. - PBSS304PD |
|
Similar Description - PBSS304PD |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
