PBSS2540M datasheet(4/9 Pages) NXP

Part #	PBSS2540M

Description	40 V, 0.5 A NPN low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 9 page

2003 Jul 22

4

NXP Semiconductors

Product data sheet

40 V, 0.5 A

NPN low VCEsat (BISS) transistor

PBSS2540M

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 30 V; IE = 0

−

100

nA

VCB = 30 V; IE = 0; Tj = 150 °C

−

50

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

100

nA

hFE

DC current gain

VCE = 2 V; IC = 10 mA

200

−

VCE = 2 V; IC = 100 mA; note 1

150

−

VCE = 2 V; IC = 500 mA; note 1

50

−

VCEsat

collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA

−

50

mV

IC = 100 mA; IB = 5 mA

−

100

mV

IC = 200 mA; IB = 10 mA; note 1

−

200

mV

IC = 500 mA; IB = 50 mA; note 1

−

250

mV

RCEsat

equivalent on-resistance

IC = 500 mA; IB = 50 mA; note 1

−

380

<500

m

Ω

VBEsat

base-emitter saturation voltage

IC = 500 mA; IB = 50 mA; note 1

−

1.2

V

VBEon

base-emitter turn-on voltage

VCE = 2 V; IC = 100 mA; note 1

−

1.1

V

fT

transition frequency

IC = 100 mA; VCE = 5 V;

f = 100 MHz

250

450

−

MHz

Cc

collector capacitance

VCB = 10 V; IE = Ie = 0; f = 1 MHz

−

6

pF

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