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PBSS4350T Datasheet(PDF) 6 Page - NXP Semiconductors |
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PBSS4350T Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 10 page 2004 Jan 09 6 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T handbook, halfpage MLD871 10 103 102 10−1 110 IC (mA) VCEsat (mV) 102 103 104 1 (3) (2) (1) Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage MLD872 10 103 102 10−1 110 IC (mA) VCEsat (mV) 102 103 104 1 (3) (1) (2) Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage MLD873 104 103 102 10−1 110 IC (mA) VCEsat (mV) 102 103 104 10 (3) (1) (2) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 50. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage MLD874 104 103 102 10−1 110 IC (mA) VCEsat (mV) 102 103 104 10 (3) (1) (2) Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 100. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. |
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