PBSS4540X datasheet(7/13 Pages) NXP

Part #	PBSS4540X

Description	40 V, 5 A NPN low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 13 page

2004 Nov 04

7

NXP Semiconductors

Product data sheet

40 V, 5 A

NPN low VCEsat (BISS) transistor

PBSS4540X

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off

current

VCB = 30 V; IE = 0 A

−

100

nA

VCB = 30 V; IE = 0 A; Tj = 150 °C

−

50

μA

ICES

collector-emitter cut-off

current

VCE = 30 V; VBE = 0 V

−

0.1

μA

IEBO

emitter-base cut-off current VEB = 5 V; IC = 0 A

−

100

nA

hFE

DC current gain

VCE = 2 V; IC = 0.5 A

300

−

VCE = 2 V; IC = 1 A; note 1

300

−

VCE = 2 V; IC = 2 A; note 1

250

−

VCE = 2 V; IC = 5 A; note 1

100

−

VCEsat

collector-emitter saturation

voltage

IC = 0.5 A; IB = 5 mA

−

90

mV

IC = 1 A; IB = 10 mA

−

120

mV

IC = 2 A; IB = 200 mA; note 1

−

150

mV

IC = 4 A; IB = 200 mA; note 1

−

290

mV

IC = 5 A; IB = 500 mA; note 1

−

355

mV

RCEsat

equivalent on-resistance

IC = 5 A; IB = 500 mA; note 1

−

40

71

m

Ω

VBEsat

base-emitter saturation

voltage

IC = 4 A; IB = 200 mA; note 1

−

1.1

V

IC = 5 A; IB = 500 mA; note 1

−

1.2

V

VBEon

base-emitter turn-on

voltage

VCE = 2 V; IC = 2 A

−

1.1

V

fT

transition frequency

VCE = 10 V; IC = 0.1 A;

f = 100 MHz

70

−

MHz

Cc

collector capacitance

VCB = 10 V; IE = ie = 0 A;

f = 1 MHz

−

75

pF

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