PBSS5240V datasheet(5/9 Pages) NXP

Part #	PBSS5240V

Description	40 V low VCEsat PNP transistor

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 9 page

2003 Jan 30

5

NXP Semiconductors

Product data sheet

40 V low VCEsat PNP transistor

PBSS5240V

handbook, halfpage

0

1000

200

400

600

800

MHC464

−10−1

−1

−10

IC (mA)

hFE

−102

−103

−104

(3)

(2)

(1)

Fig.2

DC current gain as a function of collector

current; typical values.

VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MHC465

0

−1.2

−0.4

−0.8

−10−1

−1

−10

IC (mA)

VBE

(V)

−102

−103

−104

(1)

(3)

(2)

Fig.3

Base-emitter voltage as a function of

collector current; typical values.

VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

MHC466

−10

−103

−102

−10−1

−1

−10

IC (mA)

VCEsat

(mV)

−102

−103

−104

−1

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−0.2

−1.2

−0.4

−0.6

−0.8

−1

MHC467

−10−1

−1

−10

IC (mA)

VBEsat

(V)

−103

−102

−104

(1)

(2)

(3)

Fig.5

Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

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