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PBSS8110T Datasheet(PDF) 9 Page - NXP Semiconductors |
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PBSS8110T Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 12 page 2003 Dec 22 9 NXP Semiconductors Product data sheet 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T 05 2 0 0.4 0.8 1.2 1.6 12 3 4 VCE (V) IC (A) mle358 (1) (2) (3) (4) (9) (5) (10) (7) (8) (6) Fig.13 Collector current as a function of collector-emitter voltage; typical values. (1) IB = 3500 μA. (2) IB = 3150 μA. (3) IB = 2800 μA. (4) IB = 2450 μA. (5) IB = 2100 μA. (6) IB = 1750 μA. (7) IB = 1400 μA. (8) IB = 1050 μA. (9) IB = 700 μA. (10) IB = 350 μA. Tamb = 25 °C. handbook, halfpage MLE359 103 102 1 10−1 10 10−1 1 RCEsat ( Ω) IC (mA) 10 102 103 104 (3) (1) (2) Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage MLE360 103 102 1 10−1 10 10−1 1 RCEsat ( Ω) IC (mA) 10 102 103 104 Fig.15 Collector-emitter equivalent on-resistance as a function of collector current; typical values. IC/IB = 20. Tamb = 25 °C. handbook, halfpage MLE361 103 102 1 10−1 10 10−1 1 RCEsat ( Ω) IC (mA) 10 102 103 104 Fig.16 Collector-emitter equivalent on-resistance as a function of collector current; typical values. IC/IB = 50. Tamb = 25 °C. |
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