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PBSS8110X Datasheet(PDF) 10 Page - NXP Semiconductors |
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PBSS8110X Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 15 page PBSS8110X_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 10 of 15 NXP Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Test information Fig 16. BISS transistor switching time definition VCC =10V; IC = 0.5 A; IBon = 0.025 A; IBoff = −0.025 A Fig 17. Test circuit for switching times 006aaa003 IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff RC R2 R1 DUT mlb826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC |
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