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ZUMT5179 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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ZUMT5179 Datasheet(HTML) 1 Page - Zetex Semiconductors |
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1 / 2 page  SOT323 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 1- NOVEMBER 1998 FEATURES *High f T=900MHz Min * Max capacitance=1pF * Low noise 4.5dB PARTMARKING DETAIL - T6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 2.5 V Continuous Collector Current IC 50 mA Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Sustaining Voltage VCEO(SUS) 12 V IC= 3mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO 20 V IC= 1µA, IE=0 Emitter-Base Breakdown Voltage V(BR)EBO 2.5 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 0.02 1.0 µA µA VCB=15V, IE=0 VCB=15V, IE=0, Tamb=150°C Static Forward Current Transfer Ratio hFE 25 250 IC=3mA, VCE=1V Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=10mA, IB=1mA Transition Frequency fT 900 2000 MHz IC=5mA, VCE=6V, f=100MHz Collector-Base Capacitance Ccb 1pF IE=0, VCB=10V, f=1MHz Small Signal Current Gain hfe 25 300 IC=2mA, VCE=6V, f=1KHz Collector Base Time Constant rb’Cc 314 ps IE=2mA, VCB=6V, f=31.9MHz Noise Figure NF 4.5 dB IC=1.5mA, VCE=6V RS=50Ω, f=200MHz Common-Emitter Amplifier Power Gain Gpe 15 dB IC=5mA, VCE=6V f=200MHz Spice parameter data is available upon request for this device ZUMT5179 |
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Similar Description - ZUMT5179 |
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