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PDTA113E Datasheet(PDF) 5 Page - NXP Semiconductors |
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PDTA113E Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 18 page PDTA113E_SER_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 September 2009 5 of 18 NXP Semiconductors PDTA113E series PNP resistor-equipped transistors; R1 = 1 k Ω, R2 = 1 kΩ 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −50 V; IE = 0 A - - −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 A - - −1 µA VCE = −30 V; IB = 0 A; Tj = 150 °C -- −50 µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −4mA hFE DC current gain VCE = −5 V; IC = −40 mA 30 - - VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −1.5 mA - - −150 mV VI(off) off-state input voltage VCE = −5 V; IC = −100 µA- −1.3 −0.5 V VI(on) on-state input voltage VCE = −300 mV; IC = −20 mA −2 −1.7 - V R1 bias resistor 1 (input) 0.7 1 1.3 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f=1MHz --2 pF |
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