PDTA113E datasheet(5/18 Pages) NXP

Part #	PDTA113E

Description	PNP resistor-equipped transistors; R1 = 1 kW, R2 = 1 kW

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Manufacturer	NXP [NXP Semiconductors]

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5 / 18 page

PDTA113E_SER_5

Product data sheet

Rev. 05 — 2 September 2009

5 of 18

NXP Semiconductors

PDTA113E series

PNP resistor-equipped transistors; R1 = 1 k

Ω, R2 = 1 kΩ

7.

Characteristics

Table 8.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −50 V; IE = 0 A

-

−100

nA

ICEO

collector-emitter

cut-off current

VCE = −30 V; IB = 0 A

-

−1

µA

VCE = −30 V; IB = 0 A;

Tj = 150 °C

--

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC = 0 A

-

−4mA

hFE

DC current gain

VCE = −5 V; IC = −40 mA

30

-

VCEsat

collector-emitter

saturation voltage

IC = −30 mA; IB = −1.5 mA

-

−150

mV

VI(off)

off-state input voltage

VCE = −5 V; IC = −100 µA-

−1.3

−0.5

V

VI(on)

on-state input voltage

VCE = −300 mV; IC = −20 mA

−2

−1.7

-

V

R1

bias resistor 1 (input)

0.7

1

1.3

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2

Cc

collector capacitance

VCB = −10 V; IE = ie = 0 A;

f=1MHz

--2

pF

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